Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth

Submonolayer homoepitaxial film growth

In this work we investigate influence of substrate temperature on the surface morphology for substrate coverage below one monolayer. The model of film growth is based on random deposition enriched by limited surface diffusion. Also anisotropy in the growth is involved. We found from computer simulations for simple cubic lattice and solid-on-solid model, that the surface morphology changes with ...

Homoepitaxial diamond growth for the control of surface conductive carrier transport properties

Homoepitaxial growth of single crystal diamond membranes for quantum information processing.

Homoepitaxial growth of single crystal diamond membranes is demonstrated employing a microwave plasma chemical vapor deposition technique. The membranes possess excellent structural, optical, and spin properties, which make them suitable for fabrication of optical microcavities for applications in quantum information processing, photonics, spintronics, and sensing.

Submonolayer homoepitaxial films growth

In this work we investigate influence of substrate temperature on the surface morphology for substrate coverage below one monolayer. The model of film growth is based on random deposition enriched by limited surface diffusion. Also anisotropy in the growth is involved. We found from computer simulations for simple cubic lattice and solid-on-solid model, that surface morphology changes with incr...

Pulsed sputtering during homoepitaxial surface growth: layer-by-layer forever

The homoepitaxial growth of initially flat surfaces has so far always led to surfaces which become rougher and rougher as the number of layers increases: even in systems exhibiting ‘‘layer-by-layer’’ growth the registry of the layers is gradually lost. We propose that pulsed glancing-angle sputtering, once per monolayer, can in principle lead to layer-by-layer growth that continues indefinitely...